US Patent Issued to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY on Jan. 25 for "High electron mobility transistor having a boron nitride alloy interlayer and method of production" (Saudi Arabia Inventor)

Press/Media: Press / Media

PeriodJan 25 2022

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Media coverage

  • TitleUS Patent Issued to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY on Jan. 25 for "High electron mobility transistor having a boron nitride alloy interlayer and method of production" (Saudi Arabia Inventor)
    Media name/outletUS Fed News
    Country/TerritoryUnited States
    Date01/25/22
    PersonsXiaohang Li
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