Research output per year
Research output per year
Personal profile
Research Overview
Professor Li is interested in the investigation of growth, simulation, fabrication, and characterization of III-nitride structures for next-generation devices.
The devices of particular interest include LED, laser, solar cells, transistors, and sensors. Because of excellent properties of III-nitrides, these devices are expected to become the enabling technologies to revolutionize energy, communication, biochemical, biomedical, and data storage industries and many others.
Professor Li’s research activities are highly interdisciplinary. They involve electrical engineering, applied physics, material science, chemical engineering and other related disciplines.
Key Research Areas
Electrical Engineering
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Education
Electrical Engineering, Ph.D., Georgia Institute of Technology
2015
Award Date: Jan 1 2015
Electrical Engineering, M.S., Lehigh University
2011
Award Date: Jan 1 2011
Applied Physics, B.S., Huazhong University of Science and Technology
2008
Award Date: Jan 1 2008
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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53-1: Invited Paper: Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel Band Engineering and Fabrication Technology
Liu, Z., Lu, Y. & Li, X., Aug 30 2023, In: SID Symposium Digest of Technical Papers. 54, 1, p. 761-762 2 p.Research output: Contribution to journal › Article › peer-review
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A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction
Vasquez, J. M. T., Ashai, A., Lu, Y., Khandelwal, V., Rajbhar, M., Kumar, M., Li, X. & Sarkar, B., Feb 9 2023, In: Journal of Physics D: Applied Physics. 56, 6, 065104.Research output: Contribution to journal › Article › peer-review
Open Access14 Scopus citations -
Correlative Atomic Coordination and Interfacial Charge Polarity in Al2O3/GaN and Al2O3/Si Heterostructures
Wang, C. & Li, X., Mar 2023, In: Physica Status Solidi - Rapid Research Letters. 17, 3, 2200413.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics
Khandelwal, V., Rajbhar, M. K., García, G. I. M., Tang, X., Sarkar, B. & Li, X., Jun 1 2023, In: Japanese Journal of Applied Physics. 62, 6, 060902.Research output: Contribution to journal › Article › peer-review
Open Access3 Scopus citations -
Detailed band alignment of high-B-composition BGaN with GaN and AlN
AlQatari, F. S., Liao, C.-H., Tang, X., Lopatin, S. & Li, X., Jun 6 2023, In: Journal of Physics D: Applied Physics.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Flexible gallium oxide electronics
Tang, X., Lu, Y. & Li, X., Apr 5 2023, In: Semiconductor Science and Technology.Research output: Contribution to journal › Article › peer-review
4 Scopus citations -
Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates
Tang, X., Lu, Y., Lin, R., Liao, C.-H., Zhao, Y., Li, K.-H., Xiao, N., Cao, H., Babatain, W. & Li, X., Mar 20 2023, In: Applied Physics Letters. 122, 12, p. 121101Research output: Contribution to journal › Article › peer-review
22 Scopus citations -
Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure
Wang, C. & Li, X., Jun 15 2023, In: Applied Surface Science. 622, 156954.Research output: Contribution to journal › Article › peer-review
Open Access3 Scopus citations
Prizes
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Applied Materials-TSMC Appreciation Award
Li, X. (Recipient), 2001
Prize: Award or Honor › Teaching Award
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Best Product Showcase Prize, Georgia Institute of Technology
Li, X. (Recipient), 2013
Prize: Award or Honor › Innovation Award
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Edison Prize, Georgia Institute of Technology
Li, X. (Recipient), 2013
Prize: Award or Honor › Excellence Award
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Georgia Tech representative, Global Young Scientist Summit
Li, X. (Recipient), 2015
Prize: Academic Service › Other Activities
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Graduate Student Fellowship, IEEE Photonics Society
Li, X. (Recipient), 2014
Prize: Award or Honor › Early Career or Student Award
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Harold M. Manasevit Young Investigator Award
Li, X. (Recipient), 2018
Prize: Award or Honor › Early Career or Student Award
Press/Media
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Study Findings on Electronics Are Outlined in Reports from King Abdullah University of Science and Technology (KAUST) (Three-dimensional Integrated Metal-oxide Transistors)
Li, X., Faber, H., Tang, X., Yuvaraja, S. & Xiao, N.
08/20/24
1 item of Media coverage
Press/Media: Press / Media
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World's First 10-Stack 3D Transistors For Compact Electronics
07/31/24
1 item of Media coverage
Press/Media: Press / Media
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World’s First 10-Stack 3D Transistors For Compact Electronics
07/31/24
1 item of Media coverage
Press/Media: Press / Media
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New 3D integrated metal-oxide transistors to fabricate compact and high density electronics
Li, X. & Yuvaraja, S.
07/30/24
1 item of Media coverage
Press/Media: Press / Media
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US Patent Issued to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY on July 23 for "Optoelectronic device having a boron nitride alloy electron blocking layer and method of production" (Saudi Arabia Inventors)
07/24/24
1 item of Media coverage
Press/Media: Press / Media
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Studies from King Abdullah University of Science and Technology (KAUST) in the Area of Engineering Described (Contact-engineering of Self-aligned-gate Metal Oxide Transistors Processed Via Electrode Self-delamination and Rapid Photonic Curing)
Zhang, X., Li, X., Faber, H., AlGhamdi, W. S., Nugraha, M. I., Adilbekova, B., Mazo-Mantilla, H. F., Ma, Y., Heeney, M., Liu, C., Luo, L. & Xiao, N.
07/16/24
1 item of Media coverage
Press/Media: Press / Media
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KAUST team pioneers In₂O₃ TFT stack
Li, X. & Yuvaraja, S.
07/10/24
1 item of Media coverage
Press/Media: Press / Media
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US Patent Issued to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY on June 11 for "Multilayer metalens" (Saudi Arabia Inventors)
06/12/24
1 item of Media coverage
Press/Media: Press / Media