TY - JOUR
T1 - δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells
AU - Sun, Minglei
N1 - KAUST Repository Item: Exported on 2020-10-30
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.
PY - 2020/10/10
Y1 - 2020/10/10
N2 - We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.
AB - We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.
UR - http://hdl.handle.net/10754/665696
UR - https://link.aps.org/doi/10.1103/PhysRevApplied.14.044015
UR - http://www.scopus.com/inward/record.url?scp=85093359802&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.14.044015
DO - 10.1103/PhysRevApplied.14.044015
M3 - Article
SN - 2331-7019
VL - 14
JO - Physical Review Applied
JF - Physical Review Applied
IS - 4
ER -