(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation

C. D. Young*, K. Akarvardar, M. O. Baykan, K. Matthews, I. Ok, T. Ngai, K. W. Ang, J. Pater, Casey Smith, M. M. Hussain, P. Majhi, C. Hobbs

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


The performance and reliability of (1 0 0) and (1 1 0) sidewall, silicon-on-insulator (SOI) FinFETs with a Hf-based gate dielectric were evaluated. Unlike the typical planar MOSFET mobility orientation dependence, (1 1 0) FinFET sidewalls do not impair electron mobility and result in good short channel performance compared to (1 0 0) FinFET sidewall devices. Hot carrier injection (HCI) degradation was also investigated with nMOS and pMOS high-κ FinFETs on both sidewall surface orientations. Impact ionization at the source, as well as at the traditional drain side, was found to enhance HCI degradation when gate voltage (Vg) = drain voltage (Vd). The degradation becomes more pronounced as the gate length decreases, with a negligible dependence on substrate orientation. However, the orientation dependence of negative bias temperature instability (NBTI) on FinFETs demonstrates that the (1 1 0) orientation is slightly worse than (1 0 0). The kinetics of ΔNIT(t) under negative bias stress conditions suggests the interface trap density (NIT) is generated by a mechanism similar to that in planar devices. front matter

Original languageEnglish (US)
Pages (from-to)2-10
Number of pages9
JournalSolid-State Electronics
StatePublished - Dec 2012


  • FinFET
  • HCI
  • Mobility
  • NBTI
  • Orientation dependence
  • Sidewall

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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