∼12% Efficiency improvement in a-Si thin-film solar cells using ALD grown 2-nm-thick ZnO nanoislands

Farsad Imtiaz Chowdhury, Nazek El-Atab, Aaesha Alnuaimi, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

2-nm-thick ZnO nanoislands have been grown using Atomic Layer Deposition (ALD) on the surface of n-i-p a-Si:H solar cells. With the nanoislands, an average improvement of 10.6% in short circuit current density (Jsc) and 12.05% in efficiency compared to the reference cell are achieved. Improved spectral response is obtained from ZnO nanoislands coated cell with an improvement of 4.2% and 5.25% in peak EQE and IQE respectively. The coated cell also minimizes reflection between 340-520 nm indicating light scattering ability of these nanoislands. Further analysis suggests that overall enhancement can be attributed to photon energy downshifting with a reduction in reflectivity.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages318-322
Number of pages5
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period06/5/1606/10/16

Keywords

  • down shifting
  • light scattering
  • solar cells
  • ZnO nanoislands

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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