1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

S. Fedderwitz; Andreas Stöhr; M. Weiß; A. Poloczek; V. Rymanov; A. Patra; D. Jäger; K. H. Tan; S. F. Yoon; W. K. Loke; S. Wicaksono; T. K. Ng; E. Tangdiongga

doi:10.1109/LPT.2009.2020302

1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

S. Fedderwitz^*, Andreas Stöhr, M. Weiß, A. Poloczek, V. Rymanov, A. Patra, D. Jäger, K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, T. K. Ng, E. Tangdiongga

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-μm wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of ∼0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-μm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate =10^-12) transmission of 10-Gb Ethernet data at 1.3-μ m wavelength is successfully demonstrated.

Original language	English (US)
Pages (from-to)	911-913
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	13
DOIs	https://doi.org/10.1109/LPT.2009.2020302
State	Published - Jul 1 2009
Externally published	Yes

Keywords

1.3-μm photodetectors (PDs)
Dilute-nitride-based photodetectors (PDs)
Fiberoptic transmission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2009.2020302

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@article{ee5451fbf8e549119d1385d57317a483,

title = "1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links",

abstract = "We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-μm wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of ∼0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-μm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate =10-12) transmission of 10-Gb Ethernet data at 1.3-μ m wavelength is successfully demonstrated.",

keywords = "1.3-μm photodetectors (PDs), Dilute-nitride-based photodetectors (PDs), Fiberoptic transmission",

author = "S. Fedderwitz and Andreas St{\"o}hr and M. Wei{\ss} and A. Poloczek and V. Rymanov and A. Patra and D. J{\"a}ger and Tan, {K. H.} and Yoon, {S. F.} and Loke, {W. K.} and S. Wicaksono and Ng, {T. K.} and E. Tangdiongga",

note = "Funding Information: Manuscript received January 19, 2009; revised March 16, 2009. Current version published June 17, 2009. This work was supported by the EC within the European NoE ISIS under Grant 126592. The University of Duisburg-Essen further acknowledges support by the European IPHOBAC project under Grant 35317.",

year = "2009",

month = jul,

day = "1",

doi = "10.1109/LPT.2009.2020302",

language = "English (US)",

volume = "21",

pages = "911--913",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - 1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

AU - Fedderwitz, S.

AU - Stöhr, Andreas

AU - Weiß, M.

AU - Poloczek, A.

AU - Rymanov, V.

AU - Patra, A.

AU - Jäger, D.

AU - Tan, K. H.

AU - Yoon, S. F.

AU - Loke, W. K.

AU - Wicaksono, S.

AU - Ng, T. K.

AU - Tangdiongga, E.

N1 - Funding Information: Manuscript received January 19, 2009; revised March 16, 2009. Current version published June 17, 2009. This work was supported by the EC within the European NoE ISIS under Grant 126592. The University of Duisburg-Essen further acknowledges support by the European IPHOBAC project under Grant 35317.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-μm wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of ∼0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-μm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate =10-12) transmission of 10-Gb Ethernet data at 1.3-μ m wavelength is successfully demonstrated.

AB - We report on 10-Gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3-μm wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate.With an optical bandgap of ∼0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-μm wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate =10-12) transmission of 10-Gb Ethernet data at 1.3-μ m wavelength is successfully demonstrated.

KW - 1.3-μm photodetectors (PDs)

KW - Dilute-nitride-based photodetectors (PDs)

KW - Fiberoptic transmission

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U2 - 10.1109/LPT.2009.2020302

DO - 10.1109/LPT.2009.2020302

M3 - Article

AN - SCOPUS:67649592498

SN - 1041-1135

VL - 21

SP - 911

EP - 913

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 13

ER -

1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

Abstract

Keywords

ASJC Scopus subject areas

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