1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

Qiang Li; Yating Wan; Alan Y. Liu; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu; Kei May Lau

doi:10.1364/OE.24.021038

1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

Qiang Li, Yating Wan, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.

Original language	English (US)
Pages (from-to)	21038-21045
Number of pages	8
Journal	Optics Express
Volume	24
Issue number	18
DOIs	https://doi.org/10.1364/OE.24.021038
State	Published - Sep 5 2016
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon",

abstract = "We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.",

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AU - Li, Qiang

AU - Wan, Yating

AU - Liu, Alan Y.

AU - Gossard, Arthur C.

AU - Bowers, John E.

AU - Hu, Evelyn L.

AU - Lau, Kei May

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PY - 2016/9/5

Y1 - 2016/9/5

N2 - We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.

AB - We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.

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JF - Optics Express

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ER -

1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

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