14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy

Kian Huan Tan; Soon F. Yoon; Sascha Fedderwitz; Andreas Stöhr; Wan Khai Loke; Satrio Wicaksono; Tien Khee Ng; Mario Weiß; Artur Poloczek; Vitaly Rymanov; Ardhendu Patra; Eduward Tangdiongga; Dieter Jäger

doi:10.1109/LED.2009.2018290

14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy

Kian Huan Tan^*, Soon F. Yoon, Sascha Fedderwitz, Andreas Stöhr, Wan Khai Loke, Satrio Wicaksono, Tien Khee Ng, Mario Weiß, Artur Poloczek, Vitaly Rymanov, Ardhendu Patra, Eduward Tangdiongga, Dieter Jäger

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm², respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.

Original language	English (US)
Pages (from-to)	590-592
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/LED.2009.2018290
State	Published - 2009

Keywords

1.3-μm PDs
Dilute-nitride-based photodetectors (PDs)
GaNAsSb
Molecular beam epitaxy (MBE)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2018290

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Tan, K. H., Yoon, S. F., Fedderwitz, S., Stöhr, A., Loke, W. K., Wicaksono, S., Ng, T. K., Weiß, M., Poloczek, A., Rymanov, V., Patra, A., Tangdiongga, E., & Jäger, D. (2009). 14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy. IEEE Electron Device Letters, 30(6), 590-592. https://doi.org/10.1109/LED.2009.2018290

@article{7c7a7d983f9a425180b11ced6ce7698f,

title = "14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy",

abstract = "We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.",

keywords = "1.3-μm PDs, Dilute-nitride-based photodetectors (PDs), GaNAsSb, Molecular beam epitaxy (MBE)",

author = "Tan, {Kian Huan} and Yoon, {Soon F.} and Sascha Fedderwitz and Andreas St{\"o}hr and Loke, {Wan Khai} and Satrio Wicaksono and Ng, {Tien Khee} and Mario Wei{\ss} and Artur Poloczek and Vitaly Rymanov and Ardhendu Patra and Eduward Tangdiongga and Dieter J{\"a}ger",

note = "Funding Information: Manuscript received February 25, 2009; revised March 10, 2009. First published April 28, 2009; current version published May 27, 2009. This work was supported by the European Commission within the European Network of Excellence ISIS under Grant 26592 and the European IPHOBAC Project under Grant 35317. The review of this letter was arranged by Editor P. K.-L. Yu.",

year = "2009",

doi = "10.1109/LED.2009.2018290",

language = "English (US)",

volume = "30",

pages = "590--592",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

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Tan, KH, Yoon, SF, Fedderwitz, S, Stöhr, A, Loke, WK, Wicaksono, S, Ng, TK, Weiß, M, Poloczek, A, Rymanov, V, Patra, A, Tangdiongga, E & Jäger, D 2009, '14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy', IEEE Electron Device Letters, vol. 30, no. 6, pp. 590-592. https://doi.org/10.1109/LED.2009.2018290

TY - JOUR

T1 - 14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy

AU - Tan, Kian Huan

AU - Yoon, Soon F.

AU - Fedderwitz, Sascha

AU - Stöhr, Andreas

AU - Loke, Wan Khai

AU - Wicaksono, Satrio

AU - Ng, Tien Khee

AU - Weiß, Mario

AU - Poloczek, Artur

AU - Rymanov, Vitaly

AU - Patra, Ardhendu

AU - Tangdiongga, Eduward

AU - Jäger, Dieter

N1 - Funding Information: Manuscript received February 25, 2009; revised March 10, 2009. First published April 28, 2009; current version published May 27, 2009. This work was supported by the European Commission within the European Network of Excellence ISIS under Grant 26592 and the European IPHOBAC Project under Grant 35317. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2009

Y1 - 2009

N2 - We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.

AB - We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radiofrequency plasma-assisted nitrogen source. The 0.1-μm-thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and .9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.

KW - 1.3-μm PDs

KW - Dilute-nitride-based photodetectors (PDs)

KW - GaNAsSb

KW - Molecular beam epitaxy (MBE)

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U2 - 10.1109/LED.2009.2018290

DO - 10.1109/LED.2009.2018290

M3 - Article

AN - SCOPUS:67649370948

SN - 0741-3106

VL - 30

SP - 590

EP - 592

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy

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