150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang, B. Yuan, Y. Shi, F. Palumbo, S. Chen, F. Hui, X. Jing, M. A. Villena, M. Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

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Physics

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