1.55 lm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) si

Bei Shi, Si Zhu, Qiang Li, Chak Wah Tang, Yating Wan, Evelyn L. Hu, Kei May Lau

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 lW, and lasing up to 60 C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.
Original languageEnglish (US)
JournalApplied Physics Letters
Volume110
Issue number12
DOIs
StatePublished - Mar 20 2017
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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