@inproceedings{d1a6c974cba94fb1abb5cdfdc68c0887,
title = "2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices",
abstract = "In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication and filtration. The active layer of the memory was deposited by Atomic Layer Deposition (ALD) and spin coating technique was used to deliver the Si-NPs across the sample. The nanoparticles provided a good retention of charges (>10 years) in the memory cells and allowed for a large threshold voltage (Vt) shift (3.4 V) at reduced programming voltages (1 V). The addition of ZnO to the charge trapping media enhanced the electric field across the tunnel oxide and allowed for larger memory window at lower operating voltages.",
author = "Nazek El-Atab and Ayse Ozcan and Sabri Alkis and Okyay, {Ali K.} and Ammar Nayfeh",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 ; Conference date: 18-08-2014 Through 21-08-2014",
year = "2014",
month = nov,
day = "26",
doi = "10.1109/NANO.2014.6968168",
language = "English (US)",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "505--509",
booktitle = "Proceedings of the IEEE Conference on Nanotechnology",
address = "United States",
}