Abstract
Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130°C - often needed for the curing of printed metal contacts - detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.
Original language | English (US) |
---|---|
Article number | 081601 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 8 |
DOIs | |
State | Published - Aug 24 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)