3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

Sangwon Ko; Eric Verploegen; Sanghyun Hong; Rajib Mondal; Eric T. Hoke; Michael F. Toney; Michael D. McGehee; Zhenan Bao

doi:10.1021/ja207429s

3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

Sangwon Ko, Eric Verploegen, Sanghyun Hong, Rajib Mondal, Eric T. Hoke, Michael F. Toney, Michael D. McGehee, Zhenan Bao

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.

Original language	English (US)
Pages (from-to)	16722-16725
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	133
Issue number	42
DOIs	https://doi.org/10.1021/ja207429s
State	Published - Oct 26 2011
Externally published	Yes

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10.1021/ja207429s

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@article{1494eea514ff42379437aa7a23ce46cd,

title = "3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics",

abstract = "We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. {\textcopyright} 2011 American Chemical Society.",

author = "Sangwon Ko and Eric Verploegen and Sanghyun Hong and Rajib Mondal and Hoke, {Eric T.} and Toney, {Michael F.} and McGehee, {Michael D.} and Zhenan Bao",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-C1-015-21 Acknowledgements: This publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics, Award KUS-C1-015-21, made by King Abdullah University of Science and Technology (KAUST). Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource User Facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2011",

month = oct,

day = "26",

doi = "10.1021/ja207429s",

language = "English (US)",

volume = "133",

pages = "16722--16725",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "42",

}

TY - JOUR

T1 - 3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

AU - Ko, Sangwon

AU - Verploegen, Eric

AU - Hong, Sanghyun

AU - Mondal, Rajib

AU - Hoke, Eric T.

AU - Toney, Michael F.

AU - McGehee, Michael D.

AU - Bao, Zhenan

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-C1-015-21 Acknowledgements: This publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics, Award KUS-C1-015-21, made by King Abdullah University of Science and Technology (KAUST). Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource User Facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2011/10/26

Y1 - 2011/10/26

N2 - We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.

AB - We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.

UR - http://hdl.handle.net/10754/597212

UR - https://pubs.acs.org/doi/10.1021/ja207429s

UR - http://www.scopus.com/inward/record.url?scp=80054975345&partnerID=8YFLogxK

U2 - 10.1021/ja207429s

DO - 10.1021/ja207429s

M3 - Article

C2 - 21970371

SN - 0002-7863

VL - 133

SP - 16722

EP - 16725

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 42

ER -

3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

Abstract

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