3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors

Dhritiman Bhattacharya; Zhijie Chen; Christopher J. Jensen; Edward C. Burks; Dustin A. Gilbert; Xixiang Zhang; Gen Yin; Kai Liu

3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors

Dhritiman Bhattacharya, Zhijie Chen, Christopher J. Jensen, Edward C. Burks, Dustin A. Gilbert, Xixiang Zhang, Gen Yin, Kai Liu

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Abstract

Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.

Original language	English (US)
Journal	Nano Letters
State	Published - 2022

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@article{871880fc44c24249a7a92c6ffa0931b6,

title = "3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors",

abstract = "Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.",

author = "Dhritiman Bhattacharya and Zhijie Chen and Jensen, {Christopher J.} and Burks, {Edward C.} and Gilbert, {Dustin A.} and Xixiang Zhang and Gen Yin and Kai Liu",

note = "KAUST Repository Item: Exported on 2022-12-08 Acknowledged KAUST grant number(s): OSR-2019-CRG8-4081 Acknowledgements: This work has been supported in part by the NSF (ECCS-1933527, ECCS- 2151809), by SMART (2018-NE-2861), one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by the National Institute of Standards and Technology (NIST), and by KAUST (OSR-2019-CRG8-4081).",

year = "2022",

language = "English (US)",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

}

TY - JOUR

T1 - 3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors

AU - Bhattacharya, Dhritiman

AU - Chen, Zhijie

AU - Jensen, Christopher J.

AU - Burks, Edward C.

AU - Gilbert, Dustin A.

AU - Zhang, Xixiang

AU - Yin, Gen

AU - Liu, Kai

N1 - KAUST Repository Item: Exported on 2022-12-08 Acknowledged KAUST grant number(s): OSR-2019-CRG8-4081 Acknowledgements: This work has been supported in part by the NSF (ECCS-1933527, ECCS- 2151809), by SMART (2018-NE-2861), one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by the National Institute of Standards and Technology (NIST), and by KAUST (OSR-2019-CRG8-4081).

PY - 2022

Y1 - 2022

N2 - Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.

AB - Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.

UR - http://hdl.handle.net/10754/686197

UR - https://arxiv.org/pdf/2211.09687.pdf

M3 - Article

SN - 1530-6984

JO - Nano Letters

JF - Nano Letters

ER -

3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors

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