4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c

Wei Cheng Lien; Dung Sheng Tsai; Der Hsien Lien; Debbie G. Senesky; Jr Hau He; Albert P. Pisano

doi:10.1109/LED.2012.2214759

4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c

Wei Cheng Lien^*, Dung Sheng Tsai, Der Hsien Lien, Debbie G. Senesky, Jr Hau He, Albert P. Pisano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10 ⁵ at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594μs684μs to 684μs786μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.

Original language	English (US)
Article number	6329395
Pages (from-to)	1586-1588
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	11
DOIs	https://doi.org/10.1109/LED.2012.2214759
State	Published - 2012
Externally published	Yes

Keywords

High-temperature electronics
photodetectors (PDs)
silicon carbide (SiC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2214759

Cite this

@article{fb0843d20d7746d185db9ceca739884b,

title = "4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c",

abstract = "This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10 5 at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594μs684μs to 684μs786μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.",

keywords = "High-temperature electronics, photodetectors (PDs), silicon carbide (SiC)",

author = "Lien, {Wei Cheng} and Tsai, {Dung Sheng} and Lien, {Der Hsien} and Senesky, {Debbie G.} and He, {Jr Hau} and Pisano, {Albert P.}",

year = "2012",

doi = "10.1109/LED.2012.2214759",

language = "English (US)",

volume = "33",

pages = "1586--1588",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "11",

}

TY - JOUR

T1 - 4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c

AU - Lien, Wei Cheng

AU - Tsai, Dung Sheng

AU - Lien, Der Hsien

AU - Senesky, Debbie G.

AU - He, Jr Hau

AU - Pisano, Albert P.

PY - 2012

Y1 - 2012

N2 - This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10 5 at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594μs684μs to 684μs786μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.

AB - This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10 5 at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594μs684μs to 684μs786μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.

KW - High-temperature electronics

KW - photodetectors (PDs)

KW - silicon carbide (SiC)

UR - http://www.scopus.com/inward/record.url?scp=84867895313&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2214759

DO - 10.1109/LED.2012.2214759

M3 - Article

AN - SCOPUS:84867895313

SN - 0741-3106

VL - 33

SP - 1586

EP - 1588

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6329395

ER -

4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c

Abstract

Keywords

ASJC Scopus subject areas

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