606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56%

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• Micro-light-emitting Diodes (micro-LEDs) 100%
• On-wafer 100%
• Peak Wavelength 100%
• External Quantum Efficiency 100%
• Amber 100%
• Characteristic Temperature 100%
• Light-emitting Diodes 50%
• Blue Shift 50%
• Nonradiative Recombination 50%
• High Current Density 50%
• Shockley-Read-Hall 50%
• Amber Light 50%

Engineering

• Light-Emitting Diode 100%
• External Quantum Efficiency 100%
• Shockley 33%
• High Current Density 33%
• Blueshift 33%
• Obtains 33%
• Radiative Recombination 33%

Physics

• Light Emitting Diode 100%
• Temperature Characteristics 66%
• Blue Shift 33%