A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion

Ifiok Umoh; Talal Al-Attar; Tokunbo Ogunfunmi

doi:10.1109/ACSSC.2010.5757550

A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion

Ifiok Umoh^*, Talal Al-Attar, Tokunbo Ogunfunmi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.

Original language	English (US)
Title of host publication	Conference Record of the 44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010
Pages	998-1001
Number of pages	4
DOIs	https://doi.org/10.1109/ACSSC.2010.5757550
State	Published - 2010
Externally published	Yes
Event	44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010 - Pacific Grove, CA, United States Duration: Nov 7 2010 → Nov 10 2010

Other

Other	44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010
Country/Territory	United States
City	Pacific Grove, CA
Period	11/7/10 → 11/10/10

ASJC Scopus subject areas

Signal Processing
Computer Networks and Communications

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10.1109/ACSSC.2010.5757550

Cite this

@inproceedings{2029c5eebdeb475fa8ea078dc5a4654f,

title = "A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion",

abstract = "In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.",

author = "Ifiok Umoh and Talal Al-Attar and Tokunbo Ogunfunmi",

year = "2010",

doi = "10.1109/ACSSC.2010.5757550",

language = "English (US)",

isbn = "9781424497218",

pages = "998--1001",

booktitle = "Conference Record of the 44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010",

note = "44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010 ; Conference date: 07-11-2010 Through 10-11-2010",

}

Umoh, I, Al-Attar, T & Ogunfunmi, T 2010, A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion. in Conference Record of the 44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010., 5757550, pp. 998-1001, 44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010, Pacific Grove, CA, United States, 11/7/10. https://doi.org/10.1109/ACSSC.2010.5757550

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AU - Al-Attar, Talal

AU - Ogunfunmi, Tokunbo

PY - 2010

Y1 - 2010

N2 - In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.

AB - In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.

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U2 - 10.1109/ACSSC.2010.5757550

DO - 10.1109/ACSSC.2010.5757550

M3 - Conference contribution

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SP - 998

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BT - Conference Record of the 44th Asilomar Conference on Signals, Systems and Computers, Asilomar 2010

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Y2 - 7 November 2010 through 10 November 2010

ER -

A 0.18μm CMOS narrow-band LNA linearization using digital base-band post-distortion

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