TY - JOUR
T1 - A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs
AU - Wu, Qian
AU - Bayerl, Albin
AU - Porti, Marc
AU - Martin-Martinez, Javier
AU - Lanza, Mario
AU - Rodriguez, Rosana
AU - Velayudhan, Vikas
AU - Nafria, Montserrat
AU - Aymerich, Xavier
AU - Gonzalez, Mireia Bargallo
AU - Simoen, Eddy
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2014/1/1
Y1 - 2014/1/1
N2 - This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.
AB - This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.
UR - https://ieeexplore.ieee.org/document/6880443
UR - http://www.scopus.com/inward/record.url?scp=84906688439&partnerID=8YFLogxK
U2 - 10.1109/TED.2014.2341315
DO - 10.1109/TED.2014.2341315
M3 - Article
SN - 0018-9383
VL - 61
SP - 3118
EP - 3124
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -