A Discontinuous Galerkin Scheme for Transient Multiphysics Simulation of Organic Electrochemical Transistors

Ming Dong, Liang Chen, Hakan Bagci

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A time domain discontinuous Galerkin (DGTD)-based framework is developed to analyze three-dimensional organic electrochemical transistors (OECTs). The proposed framework uses a local DG scheme to discretize the (non-linearly) coupled system of the Poisson equation (in electric potential) and the drift-diffusion (DD) equations (in charge densities) in space. To reduce the computational requirements, a dual-mesh scheme, which uses a dense mesh for the DD equations and a much coarser mesh for the Poisson equation, is used. Furthermore, an implicit-explicit time integration scheme, which allows for a significantly larger time-step size, is utilized to efficiently account for the extremely long response time of OECTs. Numerical results are provided to demonstrate the applicability and accuracy of the proposed solver.
Original languageEnglish (US)
Title of host publication2022 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (AP-S/URSI)
PublisherIEEE
ISBN (Print)978-1-6654-9659-9
DOIs
StatePublished - Sep 21 2022

Fingerprint

Dive into the research topics of 'A Discontinuous Galerkin Scheme for Transient Multiphysics Simulation of Organic Electrochemical Transistors'. Together they form a unique fingerprint.

Cite this