TY - JOUR
T1 - A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes
AU - Gutiérrez-Heredia, Gerardo
AU - González, Luis A.
AU - Alshareef, Husam N.
AU - Gnade, Bruce E.
AU - Quevedo-López, Manuel Angel Quevedo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2010/10/4
Y1 - 2010/10/4
N2 - We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.
AB - We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.
UR - http://hdl.handle.net/10754/561579
UR - https://iopscience.iop.org/article/10.1088/0268-1242/25/11/115001
UR - http://www.scopus.com/inward/record.url?scp=78649969867&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/25/11/115001
DO - 10.1088/0268-1242/25/11/115001
M3 - Article
SN - 0268-1242
VL - 25
SP - 115001
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 11
ER -