Abstract
Electronic information storage has become one of the major needs of modern societies, and it represents a market of more than US$5 billion [1]. Among all of the existing technologies, flash memory is the most widespread because of its simple structure, high integration, and fast speed [2]. The core cell of this device is based on the charge and discharge of a capacitor using a transistor as a tiny switch [3], but, as the devices are scaled down, this configuration presents some physical limitations [4]. Therefore, new ways for information storage are required, and, among all existing nonvolatile memories, one that has raised major expectations in recent years is resistive random access memory (RRAM) [5]. In this article, we present the working principle and functioning of the most promising RRAM devices for future information storage.
Original language | English (US) |
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Pages (from-to) | 12-17 |
Number of pages | 6 |
Journal | IEEE Nanotechnology Magazine |
Volume | 9 |
Issue number | 1 |
DOIs | |
State | Published - Mar 1 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering