A general approach to semimetallic, ultra-high-resolution, electron-beam resists

Bao Yu Zong; Gu Chang Han; Yuan Kai Zheng; Li Hua An; Tie Liu; Ke Bin Li; Jin Jun Qiu; Zai Bing Guo; Ping Luo; Hao Min Wang; Bo Liu

doi:10.1002/adfm.200800939

A general approach to semimetallic, ultra-high-resolution, electron-beam resists

Bao Yu Zong^*, Gu Chang Han, Yuan Kai Zheng, Li Hua An, Tie Liu, Ke Bin Li, Jin Jun Qiu, Zai Bing Guo, Ping Luo, Hao Min Wang, Bo Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.

Original language	English (US)
Pages (from-to)	1437-1443
Number of pages	7
Journal	Advanced Functional Materials
Volume	19
Issue number	9
DOIs	https://doi.org/10.1002/adfm.200800939
State	Published - May 8 2009
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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title = "A general approach to semimetallic, ultra-high-resolution, electron-beam resists",

abstract = "Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.",

author = "Zong, {Bao Yu} and Han, {Gu Chang} and Zheng, {Yuan Kai} and An, {Li Hua} and Tie Liu and Li, {Ke Bin} and Qiu, {Jin Jun} and Guo, {Zai Bing} and Ping Luo and Wang, {Hao Min} and Bo Liu",

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T1 - A general approach to semimetallic, ultra-high-resolution, electron-beam resists

AU - Zong, Bao Yu

AU - Han, Gu Chang

AU - Zheng, Yuan Kai

AU - An, Li Hua

AU - Liu, Tie

AU - Li, Ke Bin

AU - Qiu, Jin Jun

AU - Guo, Zai Bing

AU - Luo, Ping

AU - Wang, Hao Min

AU - Liu, Bo

PY - 2009/5/8

Y1 - 2009/5/8

N2 - Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.

AB - Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.

UR - http://www.scopus.com/inward/record.url?scp=66149127288&partnerID=8YFLogxK

U2 - 10.1002/adfm.200800939

DO - 10.1002/adfm.200800939

M3 - Article

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SN - 1616-301X

VL - 19

SP - 1437

EP - 1443

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 9

ER -

A general approach to semimetallic, ultra-high-resolution, electron-beam resists

Abstract

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