A general approach to semimetallic, ultra-high-resolution, electron-beam resists

Bao Yu Zong*, Gu Chang Han, Yuan Kai Zheng, Li Hua An, Tie Liu, Ke Bin Li, Jin Jun Qiu, Zai Bing Guo, Ping Luo, Hao Min Wang, Bo Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Commercial electron-beam resists are modified into semimetallic resists by doping with 1-3nm metal nanoparticles, which improve the resolution, contrast, strength, dry-etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron-beam lithography are readily converted into 5-50 nm, high-quality multilayers for metallic nanosensors or nanopatterns via ion-beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring.

Original languageEnglish (US)
Pages (from-to)1437-1443
Number of pages7
JournalAdvanced Functional Materials
Issue number9
StatePublished - May 8 2009
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'A general approach to semimetallic, ultra-high-resolution, electron-beam resists'. Together they form a unique fingerprint.

Cite this