A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate-Tunable Rectification Ability

Heng Wang*, Maolin Chen, Yiming Yang, Yinchang Ma, Linqu Luo, Chen Liu, Igor Getmanov, Thomas D. Anthopoulos, Xixiang Zhang, Atif Shamim*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Fingerprint

Dive into the research topics of 'A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate-Tunable Rectification Ability'. Together they form a unique fingerprint.

Engineering

Earth and Planetary Sciences

Physics

Material Science

Keyphrases