TY - JOUR
T1 - A high transconductance accumulation mode electrochemical transistor
AU - Inal, Sahika
AU - Rivnay, Jonathan
AU - Leleux, Pierre
AU - Ferro, Marc
AU - Ramuz, Marc
AU - Brendel, Johannes C.
AU - Schmidt, Martina M.
AU - Thelakkat, Mukundan
AU - Malliaras, George G.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - An organic electrochemical transistor operating in accumulation mode with high transconductance was reported. The channel comprised a thiophene-based conjugated polyelectrolyte which was p- type doped by anions supplied from a liquid electrolyte upon the application of a gate voltage. The penetration of ions into the bulk of the conjugated network and the subsequent polaron formation were monitored from the increase in the current flowing through the channel and from changes in its optical absorption spectrum. It was found that the use of EG as a co-solvent improved not only the transconductance, but also the response time of the transistors. Films cast from EG-containing solutions exhibited an ordered morphology accounting for improved hole transport. The improved temporal response was, on the other hand, attributed to faster transport of ions, which was correlated with enhanced swelling of the film. Relating the drop in vibration frequency in response to water uptake to the increase in thickness, it is found that the EG-treated films swell 20% more than the pristine films.
AB - An organic electrochemical transistor operating in accumulation mode with high transconductance was reported. The channel comprised a thiophene-based conjugated polyelectrolyte which was p- type doped by anions supplied from a liquid electrolyte upon the application of a gate voltage. The penetration of ions into the bulk of the conjugated network and the subsequent polaron formation were monitored from the increase in the current flowing through the channel and from changes in its optical absorption spectrum. It was found that the use of EG as a co-solvent improved not only the transconductance, but also the response time of the transistors. Films cast from EG-containing solutions exhibited an ordered morphology accounting for improved hole transport. The improved temporal response was, on the other hand, attributed to faster transport of ions, which was correlated with enhanced swelling of the film. Relating the drop in vibration frequency in response to water uptake to the increase in thickness, it is found that the EG-treated films swell 20% more than the pristine films.
UR - http://www.scopus.com/inward/record.url?scp=84919346466&partnerID=8YFLogxK
U2 - 10.1002/adma.201403150
DO - 10.1002/adma.201403150
M3 - Article
C2 - 25312252
AN - SCOPUS:84919346466
SN - 0935-9648
VL - 26
SP - 7450
EP - 7455
JO - Advanced materials (Deerfield Beach, Fla.)
JF - Advanced materials (Deerfield Beach, Fla.)
IS - 44
ER -