A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

E. Nogales; K. Lorenz; K. Wang; I. S. Roqan; R. W. Martin; K. P. O'Donnell; E. Alves; S. Ruffenach; O. Briot

A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

E. Nogales^*, K. Lorenz, K. Wang, I. S. Roqan, R. W. Martin, K. P. O'Donnell, E. Alves, S. Ruffenach, O. Briot

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AlN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200°C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/ wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the ⁵D₀ - ⁷F₂ transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Pages	625-630
Number of pages	6
State	Published - 2006
Externally published	Yes
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	892
ISSN (Print)	0272-9172

Other

Other	2005 Materials Research Society Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{b5b8f71c387947fca5880d757abc43f3,

title = "A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN",

abstract = "Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AlN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200°C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/ wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the 5D0 - 7F2 transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.",

author = "E. Nogales and K. Lorenz and K. Wang and Roqan, {I. S.} and Martin, {R. W.} and O'Donnell, {K. P.} and E. Alves and S. Ruffenach and O. Briot",

year = "2006",

language = "English (US)",

isbn = "1558998462",

series = "Materials Research Society Symposium Proceedings",

pages = "625--630",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

Nogales, E, Lorenz, K, Wang, K, Roqan, IS, Martin, RW, O'Donnell, KP, Alves, E, Ruffenach, S & Briot, O 2006, A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 892, pp. 625-630, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 11/28/05.

TY - GEN

T1 - A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

AU - Nogales, E.

AU - Lorenz, K.

AU - Wang, K.

AU - Roqan, I. S.

AU - Martin, R. W.

AU - O'Donnell, K. P.

AU - Alves, E.

AU - Ruffenach, S.

AU - Briot, O.

PY - 2006

Y1 - 2006

N2 - Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AlN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200°C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/ wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the 5D0 - 7F2 transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

AB - Integrated AIN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AlN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200°C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/ wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the 5D0 - 7F2 transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

UR - http://www.scopus.com/inward/record.url?scp=33646394340&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33646394340

SN - 1558998462

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 625

EP - 630

BT - Materials Research Society Symposium Proceedings

T2 - 2005 Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

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