A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for Sub-32nm technology node low power metal gate/High-k dielectric CMOSFETs

K. S. Min, C. Y. Kang, C. Park, C. S. Park, B. J. Park, J. B. Park, M. M. Hussain, Jack C. Lee, B. H. Lee, P. Kirsch, H. H. Tseng, R. Jammy, G. Y. Yeom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

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Engineering

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Material Science