@inproceedings{07e171172fd8498dbb25a1a0edb95e14,
title = "A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs",
abstract = "If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction tuning of single metal electrode on high-k dielectric. Compared to planar SOI devices, our optimized SOI FinFETs with metal/high-k stack showed high field mobility for a (110)/〈110〉 nMOSFETs, which increased almost two times. By optimizing the workfunction and the strain effect, we achieved an Ion of 930μA/μm and 680μA/μm for nMOSFETs and pMOSFETs without implementing any other stress engineering process.",
author = "Kang, {C. Y.} and R. Choi and Song, {S. C.} and K. Choi and Ju, {B. S.} and Hussain, {M. M.} and Lee, {B. H.} and G. Bersuker and C. Young and D. Heh and P. Kirsch and J. Barnet and Yang, {J. W.} and W. Xiong and Tseng, {H. H.} and R. Jammy",
year = "2006",
doi = "10.1109/IEDM.2006.346924",
language = "English (US)",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}