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A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs
C. Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J. W. Yang, W. Xiong, H. H. Tseng, R. Jammy
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
30
Scopus
citations