A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications

Ranita Halder; Uttam Kumar Das; Md Hasan Raza Ansari; Nazek El-Atab

doi:10.1109/NANO58406.2023.10231237

A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications

Ranita Halder, Uttam Kumar Das, Md Hasan Raza Ansari, Nazek El-Atab^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The work presents a novel wavy channel nanosheet field effect transistor (WCNSFET) and its circuit-level performance. In this work, a single nanosheet is transformed into a wave-like structure to enhance the physical device area, thus showing an improvement in device performance. The device and circuit level performances are analyzed using 3D TCAD simulation tools. Furthermore, the wavy channel nanosheet FETs are analyzed with different number of waves in a single sheet and compared with flat sheet-based transistors for different channel materials (Ge and GaAs). The results reveal the improvement in drive current, low propagation delay, a smooth voltage transfer characteristic, high noise margin, and low energy. The results achieved with this novel device make the device a promising candidate for next-generation low power CMOS applications.

Original language	English (US)
Title of host publication	2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023
Publisher	IEEE Computer Society
Pages	317-320
Number of pages	4
ISBN (Electronic)	9798350333466
DOIs	https://doi.org/10.1109/NANO58406.2023.10231237
State	Published - 2023
Event	23rd IEEE International Conference on Nanotechnology, NANO 2023 - Jeju City, Korea, Republic of Duration: Jul 2 2023 → Jul 5 2023

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2023-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	23rd IEEE International Conference on Nanotechnology, NANO 2023
Country/Territory	Korea, Republic of
City	Jeju City
Period	07/2/23 → 07/5/23

Keywords

Gate All Around (GAA)
Inverter
logic application
simulation
wavy channel

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO58406.2023.10231237

Cite this

Halder, R., Das, U. K., Ansari, M. H. R., & El-Atab, N. (2023). A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications. In 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023 (pp. 317-320). (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July). IEEE Computer Society. https://doi.org/10.1109/NANO58406.2023.10231237

@inproceedings{7c06686c1f5a496d90032cad4f7ea065,

title = "A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications",

abstract = "The work presents a novel wavy channel nanosheet field effect transistor (WCNSFET) and its circuit-level performance. In this work, a single nanosheet is transformed into a wave-like structure to enhance the physical device area, thus showing an improvement in device performance. The device and circuit level performances are analyzed using 3D TCAD simulation tools. Furthermore, the wavy channel nanosheet FETs are analyzed with different number of waves in a single sheet and compared with flat sheet-based transistors for different channel materials (Ge and GaAs). The results reveal the improvement in drive current, low propagation delay, a smooth voltage transfer characteristic, high noise margin, and low energy. The results achieved with this novel device make the device a promising candidate for next-generation low power CMOS applications.",

keywords = "Gate All Around (GAA), Inverter, logic application, simulation, wavy channel",

author = "Ranita Halder and Das, {Uttam Kumar} and Ansari, {Md Hasan Raza} and Nazek El-Atab",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 23rd IEEE International Conference on Nanotechnology, NANO 2023 ; Conference date: 02-07-2023 Through 05-07-2023",

year = "2023",

doi = "10.1109/NANO58406.2023.10231237",

language = "English (US)",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "317--320",

booktitle = "2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023",

address = "United States",

}

Halder, R, Das, UK, Ansari, MHR & El-Atab, N 2023, A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications. in 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. Proceedings of the IEEE Conference on Nanotechnology, vol. 2023-July, IEEE Computer Society, pp. 317-320, 23rd IEEE International Conference on Nanotechnology, NANO 2023, Jeju City, Korea, Republic of, 07/2/23. https://doi.org/10.1109/NANO58406.2023.10231237

A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications. / Halder, Ranita; Das, Uttam Kumar; Ansari, Md Hasan Raza et al.
2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. IEEE Computer Society, 2023. p. 317-320 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications

AU - Halder, Ranita

AU - Das, Uttam Kumar

AU - Ansari, Md Hasan Raza

AU - El-Atab, Nazek

PY - 2023

Y1 - 2023

N2 - The work presents a novel wavy channel nanosheet field effect transistor (WCNSFET) and its circuit-level performance. In this work, a single nanosheet is transformed into a wave-like structure to enhance the physical device area, thus showing an improvement in device performance. The device and circuit level performances are analyzed using 3D TCAD simulation tools. Furthermore, the wavy channel nanosheet FETs are analyzed with different number of waves in a single sheet and compared with flat sheet-based transistors for different channel materials (Ge and GaAs). The results reveal the improvement in drive current, low propagation delay, a smooth voltage transfer characteristic, high noise margin, and low energy. The results achieved with this novel device make the device a promising candidate for next-generation low power CMOS applications.

AB - The work presents a novel wavy channel nanosheet field effect transistor (WCNSFET) and its circuit-level performance. In this work, a single nanosheet is transformed into a wave-like structure to enhance the physical device area, thus showing an improvement in device performance. The device and circuit level performances are analyzed using 3D TCAD simulation tools. Furthermore, the wavy channel nanosheet FETs are analyzed with different number of waves in a single sheet and compared with flat sheet-based transistors for different channel materials (Ge and GaAs). The results reveal the improvement in drive current, low propagation delay, a smooth voltage transfer characteristic, high noise margin, and low energy. The results achieved with this novel device make the device a promising candidate for next-generation low power CMOS applications.

KW - Gate All Around (GAA)

KW - Inverter

KW - logic application

KW - simulation

KW - wavy channel

UR - http://www.scopus.com/inward/record.url?scp=85173596184&partnerID=8YFLogxK

U2 - 10.1109/NANO58406.2023.10231237

DO - 10.1109/NANO58406.2023.10231237

M3 - Conference contribution

AN - SCOPUS:85173596184

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 317

EP - 320

BT - 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023

PB - IEEE Computer Society

T2 - 23rd IEEE International Conference on Nanotechnology, NANO 2023

Y2 - 2 July 2023 through 5 July 2023

ER -

A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this