A novel X-ray mask concept for mix&match lithography fabrication of MOS devices by synchrotron radiation lithography

E. Di Fabrizio; L. Grella; M. Gentili; M. Baciocchi; L. Mastrogiacomo; Sang Soo Choi; Young Jin Jeon; Hyung Joun Yoo; Hai Bin Chung

doi:10.1016/S0167-9317(96)00156-6

A novel X-ray mask concept for mix&match lithography fabrication of MOS devices by synchrotron radiation lithography

E. Di Fabrizio^*, L. Grella, M. Gentili, M. Baciocchi, L. Mastrogiacomo, Sang Soo Choi, Young Jin Jeon, Hyung Joun Yoo, Hai Bin Chung

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The investigated X-ray steppers Karl Suss XRS 200/1 and XRS 200/3 use an optical alignment system for adjusting the parallelism, for gap setting and alignment between mask and wafer. In general the optical signal, when mask and wafer are at gap distance, is dependent on the optical characteristics (transparency of the mask, reflectivity of the wafer, resist film interference etc.) of both mask and wafer. In this paper, different methods to decouple the optical signal of the mask by that of the wafer and to effectively improve the optical signal contrast, are presented. The methods used allow to reach in all examined cases an alignment accuracy down to 5 nm. This value can be regarded as the resolution limit of the alignment system itself.

Original language	English (US)
Pages (from-to)	553-556
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(96)00156-6
State	Published - Feb 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(96)00156-6

Cite this

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title = "A novel X-ray mask concept for mix&match lithography fabrication of MOS devices by synchrotron radiation lithography",

abstract = "The investigated X-ray steppers Karl Suss XRS 200/1 and XRS 200/3 use an optical alignment system for adjusting the parallelism, for gap setting and alignment between mask and wafer. In general the optical signal, when mask and wafer are at gap distance, is dependent on the optical characteristics (transparency of the mask, reflectivity of the wafer, resist film interference etc.) of both mask and wafer. In this paper, different methods to decouple the optical signal of the mask by that of the wafer and to effectively improve the optical signal contrast, are presented. The methods used allow to reach in all examined cases an alignment accuracy down to 5 nm. This value can be regarded as the resolution limit of the alignment system itself.",

author = "{Di Fabrizio}, E. and L. Grella and M. Gentili and M. Baciocchi and L. Mastrogiacomo and Choi, {Sang Soo} and Jeon, {Young Jin} and Yoo, {Hyung Joun} and Chung, {Hai Bin}",

year = "1997",

month = feb,

doi = "10.1016/S0167-9317(96)00156-6",

language = "English (US)",

volume = "35",

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journal = "Microelectronic Engineering",

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T1 - A novel X-ray mask concept for mix&match lithography fabrication of MOS devices by synchrotron radiation lithography

AU - Di Fabrizio, E.

AU - Grella, L.

AU - Gentili, M.

AU - Baciocchi, M.

AU - Mastrogiacomo, L.

AU - Choi, Sang Soo

AU - Jeon, Young Jin

AU - Yoo, Hyung Joun

AU - Chung, Hai Bin

PY - 1997/2

Y1 - 1997/2

N2 - The investigated X-ray steppers Karl Suss XRS 200/1 and XRS 200/3 use an optical alignment system for adjusting the parallelism, for gap setting and alignment between mask and wafer. In general the optical signal, when mask and wafer are at gap distance, is dependent on the optical characteristics (transparency of the mask, reflectivity of the wafer, resist film interference etc.) of both mask and wafer. In this paper, different methods to decouple the optical signal of the mask by that of the wafer and to effectively improve the optical signal contrast, are presented. The methods used allow to reach in all examined cases an alignment accuracy down to 5 nm. This value can be regarded as the resolution limit of the alignment system itself.

AB - The investigated X-ray steppers Karl Suss XRS 200/1 and XRS 200/3 use an optical alignment system for adjusting the parallelism, for gap setting and alignment between mask and wafer. In general the optical signal, when mask and wafer are at gap distance, is dependent on the optical characteristics (transparency of the mask, reflectivity of the wafer, resist film interference etc.) of both mask and wafer. In this paper, different methods to decouple the optical signal of the mask by that of the wafer and to effectively improve the optical signal contrast, are presented. The methods used allow to reach in all examined cases an alignment accuracy down to 5 nm. This value can be regarded as the resolution limit of the alignment system itself.

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JO - Microelectronic Engineering

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A novel X-ray mask concept for mix&match lithography fabrication of MOS devices by synchrotron radiation lithography

Abstract

ASJC Scopus subject areas

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