This paper reports on an application of a novel X-ray mask with a back-side alignment mark for fabricating of 0.15-μm SOI p-MOSFETs in a mix-and-match process of optical and synchrotron radiation X-ray lithography. Optical alignment signals generated from the alignment marks on an X-ray mask and a wafer play an important role in obtaining high alignment accuracy. In this paper, a novel structure of the X-ray mask to improve the alignment signal of the mask and to minimize the optical interference effect on the SiN membrane is discussed. For Karl Suss XRS 200 X-ray stepper, the alignment result for synchrotron radiation lithography with the novel X-ray mask applied to fabricate SOI devices was σ x = 0.023 μm and σ y = 0.025 μm. The saturation drain current I d,sat was about 100 μA/μm, and the threshold voltage V T was about 0.4 V. The breakdown voltage BV dss between the source and the drain was measured at V G = 0 V and I D = 10 nA was larger than 4 V.
|Number of pages
|Journal of the Korean Physical Society
|Published - 1998
ASJC Scopus subject areas
- General Physics and Astronomy