A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

Ying Tsan Tang; Kai Shin Li; Lain Jong Li; Ming Yang Li; Chang Hsien Lin; Yi Ju Chen; Chun Chi Chen; Chuan Jung Su; Bo Wei Wu; Cheng San Wu; Min Cheng Chen; Jia Min Shieh; Wen Kuan Yeh; Po Cheng Su; Tahui Wang; Fu Liang Yang; Chenming Hu

doi:10.1109/IEDM.2016.7838415

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET

Ying Tsan Tang, Kai Shin Li, Lain Jong Li, Ming Yang Li, Chang Hsien Lin, Yi Ju Chen, Chun Chi Chen, Chuan Jung Su, Bo Wei Wu, Cheng San Wu, Min Cheng Chen, Jia Min Shieh, Wen Kuan Yeh, Po Cheng Su, Tahui Wang, Fu Liang Yang, Chenming Hu

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS₂ channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoS_x junction of dichalcogenide vacancies enables Si-MoS₂ contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS₂ interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.

Original language	English (US)
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	14.3.1-14.3.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838415
State	Published - Jan 31 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	12/3/16 → 12/7/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM.2016.7838415

Cite this

Tang, Y. T., Li, K. S., Li, L. J., Li, M. Y., Lin, C. H., Chen, Y. J., Chen, C. C., Su, C. J., Wu, B. W., Wu, C. S., Chen, M. C., Shieh, J. M., Yeh, W. K., Su, P. C., Wang, T., Yang, F. L., & Hu, C. (2017). A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 14.3.1-14.3.4). Article 7838415 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838415

Tang, Ying Tsan ; Li, Kai Shin ; Li, Lain Jong et al. / A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 14.3.1-14.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{848f07b094424e1c85ab2453141bcc4b,

title = "A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET",

abstract = "An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSx junction of dichalcogenide vacancies enables Si-MoS2 contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.",

author = "Tang, {Ying Tsan} and Li, {Kai Shin} and Li, {Lain Jong} and Li, {Ming Yang} and Lin, {Chang Hsien} and Chen, {Yi Ju} and Chen, {Chun Chi} and Su, {Chuan Jung} and Wu, {Bo Wei} and Wu, {Cheng San} and Chen, {Min Cheng} and Shieh, {Jia Min} and Yeh, {Wen Kuan} and Su, {Po Cheng} and Tahui Wang and Yang, {Fu Liang} and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838415",

language = "English (US)",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "14.3.1--14.3.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

address = "United States",

}

Tang, YT, Li, KS, Li, LJ, Li, MY, Lin, CH, Chen, YJ, Chen, CC, Su, CJ, Wu, BW, Wu, CS, Chen, MC, Shieh, JM, Yeh, WK, Su, PC, Wang, T, Yang, FL & Hu, C 2017, A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838415, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 14.3.1-14.3.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 12/3/16. https://doi.org/10.1109/IEDM.2016.7838415

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET. / Tang, Ying Tsan; Li, Kai Shin; Li, Lain Jong et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 14.3.1-14.3.4 7838415 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

AU - Tang, Ying Tsan

AU - Li, Kai Shin

AU - Li, Lain Jong

AU - Li, Ming Yang

AU - Lin, Chang Hsien

AU - Chen, Yi Ju

AU - Chen, Chun Chi

AU - Su, Chuan Jung

AU - Wu, Bo Wei

AU - Wu, Cheng San

AU - Chen, Min Cheng

AU - Shieh, Jia Min

AU - Yeh, Wen Kuan

AU - Su, Po Cheng

AU - Wang, Tahui

AU - Yang, Fu Liang

AU - Hu, Chenming

PY - 2017/1/31

Y1 - 2017/1/31

N2 - An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSx junction of dichalcogenide vacancies enables Si-MoS2 contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.

AB - An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoSx junction of dichalcogenide vacancies enables Si-MoS2 contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology.

UR - http://www.scopus.com/inward/record.url?scp=85014424151&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2016.7838415

DO - 10.1109/IEDM.2016.7838415

M3 - Conference contribution

AN - SCOPUS:85014424151

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 14.3.1-14.3.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

Y2 - 3 December 2016 through 7 December 2016

ER -

Tang YT, Li KS, Li LJ, Li MY, Lin CH, Chen YJ et al. A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS₂ FET. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 14.3.1-14.3.4. 7838415. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838415