A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

H. S. Lim; Y. L. Lam; Y. C. Chan; B. S. Ooi; V. Aimez; J. Beauvais; J. Beerens

A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

H. S. Lim^*, Y. L. Lam, Y. C. Chan, B. S. Ooi, V. Aimez, J. Beauvais, J. Beerens

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

The use of a one-step gray mask lithography and reactive ion etching technique with low energy P⁺⁺ion implantation induced disordering process to fabricate monolithic multiple wavelength laser diode (MWLD) across an InGaAs-InGaAsP quantum well wafer was reported. A total of 10 channels MWLDs with lasing wavelength ranging from 1.47 μm to 1.55 μm were obtained. High material quality was maintained after intermixing using this technique.

Original language	English (US)
Pages	412-413
Number of pages	2
State	Published - 2001
Externally published	Yes
Event	27th European Conference on Optical Communication - Amsterdam, Netherlands Duration: Sep 30 2001 → Oct 4 2001

Other

Other	27th European Conference on Optical Communication
Country/Territory	Netherlands
City	Amsterdam
Period	09/30/01 → 10/4/01

ASJC Scopus subject areas

General Engineering

Cite this

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title = "A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays",

abstract = "The use of a one-step gray mask lithography and reactive ion etching technique with low energy P++ion implantation induced disordering process to fabricate monolithic multiple wavelength laser diode (MWLD) across an InGaAs-InGaAsP quantum well wafer was reported. A total of 10 channels MWLDs with lasing wavelength ranging from 1.47 μm to 1.55 μm were obtained. High material quality was maintained after intermixing using this technique.",

author = "Lim, {H. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Ooi, {B. S.} and V. Aimez and J. Beauvais and J. Beerens",

year = "2001",

language = "English (US)",

pages = "412--413",

note = "27th European Conference on Optical Communication ; Conference date: 30-09-2001 Through 04-10-2001",

}

TY - CONF

T1 - A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

AU - Lim, H. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Ooi, B. S.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 2001

Y1 - 2001

N2 - The use of a one-step gray mask lithography and reactive ion etching technique with low energy P++ion implantation induced disordering process to fabricate monolithic multiple wavelength laser diode (MWLD) across an InGaAs-InGaAsP quantum well wafer was reported. A total of 10 channels MWLDs with lasing wavelength ranging from 1.47 μm to 1.55 μm were obtained. High material quality was maintained after intermixing using this technique.

AB - The use of a one-step gray mask lithography and reactive ion etching technique with low energy P++ion implantation induced disordering process to fabricate monolithic multiple wavelength laser diode (MWLD) across an InGaAs-InGaAsP quantum well wafer was reported. A total of 10 channels MWLDs with lasing wavelength ranging from 1.47 μm to 1.55 μm were obtained. High material quality was maintained after intermixing using this technique.

UR - http://www.scopus.com/inward/record.url?scp=0035741470&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035741470

SP - 412

EP - 413

T2 - 27th European Conference on Optical Communication

Y2 - 30 September 2001 through 4 October 2001

ER -

A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

Abstract

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ASJC Scopus subject areas

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