A review of composition-structure-property relationships for PZT-based heterostructure capacitors

Orlando Auciello; Kenneth D. Gifford; Daniel J. Lichtenwalner; Rovindra Dat; Husam N. Al-Shareef; Kashyap R. Bellur; Angus I. Kingon

doi:10.1080/10584589508019363

A review of composition-structure-property relationships for PZT-based heterostructure capacitors

Orlando Auciello, Kenneth D. Gifford, Daniel J. Lichtenwalner, Rovindra Dat, Husam N. Al-Shareef, Kashyap R. Bellur, Angus I. Kingon

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Studies performed by our group on composition-structure-property relationships of Pb(Zr_xT_1-x)O₃ (PZT)-based heterostructure capacitors are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO₂, and La_0.5Sr_0.5CoO₃ layers and their integration into heterostructure capacitors suitable for nonvolatile memories. The main objective of our research was to determine the influence of deposition parameters and layer processing on the composition, structure, and properties of PZT-based capacitors, with the goal of controlling fatigue, retention, and imprint effects. The work discussed relates mainly to the synthesis of films by ion beam sputter-deposition (IBSD) and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Limited comparisons are presented between structural characteristics and properties of PZT capacitors produced by IBSD and PLAD and those synthesized by the solgel technique. The work reviewed indicates that the substrate, template layer and/or bottom electrode material type contribute to the control of composition, structure, and properties of PZT-based capacitors.

Original language	English (US)
Pages (from-to)	173-187
Number of pages	15
Journal	Integrated Ferroelectrics
Volume	6
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589508019363
State	Published - Jan 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589508019363

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@article{96563a1055024603b50fcab385af4802,

title = "A review of composition-structure-property relationships for PZT-based heterostructure capacitors",

abstract = "Studies performed by our group on composition-structure-property relationships of Pb(ZrxT1-x)O3 (PZT)-based heterostructure capacitors are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO2, and La0.5Sr0.5CoO3 layers and their integration into heterostructure capacitors suitable for nonvolatile memories. The main objective of our research was to determine the influence of deposition parameters and layer processing on the composition, structure, and properties of PZT-based capacitors, with the goal of controlling fatigue, retention, and imprint effects. The work discussed relates mainly to the synthesis of films by ion beam sputter-deposition (IBSD) and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Limited comparisons are presented between structural characteristics and properties of PZT capacitors produced by IBSD and PLAD and those synthesized by the solgel technique. The work reviewed indicates that the substrate, template layer and/or bottom electrode material type contribute to the control of composition, structure, and properties of PZT-based capacitors.",

author = "Orlando Auciello and Gifford, {Kenneth D.} and Lichtenwalner, {Daniel J.} and Rovindra Dat and Al-Shareef, {Husam N.} and Bellur, {Kashyap R.} and Kingon, {Angus I.}",

year = "1995",

month = jan,

doi = "10.1080/10584589508019363",

language = "English (US)",

volume = "6",

pages = "173--187",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - A review of composition-structure-property relationships for PZT-based heterostructure capacitors

AU - Auciello, Orlando

AU - Gifford, Kenneth D.

AU - Lichtenwalner, Daniel J.

AU - Dat, Rovindra

AU - Al-Shareef, Husam N.

AU - Bellur, Kashyap R.

AU - Kingon, Angus I.

PY - 1995/1

Y1 - 1995/1

N2 - Studies performed by our group on composition-structure-property relationships of Pb(ZrxT1-x)O3 (PZT)-based heterostructure capacitors are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO2, and La0.5Sr0.5CoO3 layers and their integration into heterostructure capacitors suitable for nonvolatile memories. The main objective of our research was to determine the influence of deposition parameters and layer processing on the composition, structure, and properties of PZT-based capacitors, with the goal of controlling fatigue, retention, and imprint effects. The work discussed relates mainly to the synthesis of films by ion beam sputter-deposition (IBSD) and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Limited comparisons are presented between structural characteristics and properties of PZT capacitors produced by IBSD and PLAD and those synthesized by the solgel technique. The work reviewed indicates that the substrate, template layer and/or bottom electrode material type contribute to the control of composition, structure, and properties of PZT-based capacitors.

AB - Studies performed by our group on composition-structure-property relationships of Pb(ZrxT1-x)O3 (PZT)-based heterostructure capacitors are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO2, and La0.5Sr0.5CoO3 layers and their integration into heterostructure capacitors suitable for nonvolatile memories. The main objective of our research was to determine the influence of deposition parameters and layer processing on the composition, structure, and properties of PZT-based capacitors, with the goal of controlling fatigue, retention, and imprint effects. The work discussed relates mainly to the synthesis of films by ion beam sputter-deposition (IBSD) and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Limited comparisons are presented between structural characteristics and properties of PZT capacitors produced by IBSD and PLAD and those synthesized by the solgel technique. The work reviewed indicates that the substrate, template layer and/or bottom electrode material type contribute to the control of composition, structure, and properties of PZT-based capacitors.

UR - http://www.scopus.com/inward/record.url?scp=30244522582&partnerID=8YFLogxK

U2 - 10.1080/10584589508019363

DO - 10.1080/10584589508019363

M3 - Article

AN - SCOPUS:30244522582

SN - 1058-4587

VL - 6

SP - 173

EP - 187

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

A review of composition-structure-property relationships for PZT-based heterostructure capacitors

Abstract

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