TY - JOUR
T1 - A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope
AU - Lanza, Mario
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or "0") and a low resistive state (LRS or "1"), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses. © 2014 by the authors.
AB - Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or "0") and a low resistive state (LRS or "1"), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses. © 2014 by the authors.
UR - http://www.mdpi.com/1996-1944/7/3/2155
UR - http://www.scopus.com/inward/record.url?scp=84897044399&partnerID=8YFLogxK
U2 - 10.3390/ma7032155
DO - 10.3390/ma7032155
M3 - Article
SN - 1996-1944
VL - 7
SP - 2155
EP - 2182
JO - Materials
JF - Materials
IS - 3
ER -