Abstract
The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.
Original language | English (US) |
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Pages (from-to) | 193304 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 19 |
DOIs | |
State | Published - Nov 10 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)