TY - PAT
T1 - A semiconductor device including monolithically integrated pmos and nmos transistors
AU - Hussain, Aftab M.
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2018/2/15
Y1 - 2018/2/15
N2 - A method for producing a semiconductor device involves forming a first transistor having a silicon substrate and a gate, and forming a second transistor, having a germanium substrate, on top of the first transistor. The second transistor is formed by forming a first gate (414) of the second transistor on top of, and electrically coupled to, the gate (406) of the first transistor, bonding the germanium substrate to the first gate of the second transistor so that the bonding does not damage the first transistor, and forming a second gate (422) of the second transistor on the germanium substrate.
AB - A method for producing a semiconductor device involves forming a first transistor having a silicon substrate and a gate, and forming a second transistor, having a germanium substrate, on top of the first transistor. The second transistor is formed by forming a first gate (414) of the second transistor on top of, and electrically coupled to, the gate (406) of the first transistor, bonding the germanium substrate to the first gate of the second transistor so that the bonding does not damage the first transistor, and forming a second gate (422) of the second transistor on the germanium substrate.
UR - http://hdl.handle.net/10754/629655
UR - https://patents.google.com/patent/WO2018029594A1/en
M3 - Patent
M1 - WO2018029594A
ER -