a-Si:H based two-dimensional photonic crystals

E. Bennici; S. Ferrero; F. Giorgis; C. F. Pirri; R. Rizzoli; P. Schina; L. Businaro; E. Di Fabrizio

doi:10.1016/S1386-9477(02)00668-9

a-Si:H based two-dimensional photonic crystals

E. Bennici^*, S. Ferrero, F. Giorgis, C. F. Pirri, R. Rizzoli, P. Schina, L. Businaro, E. Di Fabrizio

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We describe the fabrication processes of silicon-based two-dimensional photonic crystals (2D-PCs) with a photonic band gap in the near-IR range. The procedures involve electron beam lithography followed by an anisotropic etching step of hydrogenated amorphous silicon thin films deposited by plasma enhanced chemical vapor deposition. Micrometric and submicrometric arrays of cylindrical holes are transferred using a poly-methylmethacrylate resist layer as a mask. A careful comparison between standard parallel plate reactive ion etching and inductively coupled plasma etching techniques is performed, aimed at obtaining periodic structures with high aspect ratio and good profile sharpness.

Original language	English (US)
Pages (from-to)	539-543
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	3-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00668-9
State	Published - Mar 2003
Externally published	Yes
Event	Symposium H of the Spring Meeting of the Europe (E-MRS-02H) - Strasbourgh, France Duration: Jun 18 2002 → Jun 21 2002

Keywords

Amorphous silicon
Anisotropic etching
Photonic crystals

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(02)00668-9

Cite this

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title = "a-Si:H based two-dimensional photonic crystals",

abstract = "We describe the fabrication processes of silicon-based two-dimensional photonic crystals (2D-PCs) with a photonic band gap in the near-IR range. The procedures involve electron beam lithography followed by an anisotropic etching step of hydrogenated amorphous silicon thin films deposited by plasma enhanced chemical vapor deposition. Micrometric and submicrometric arrays of cylindrical holes are transferred using a poly-methylmethacrylate resist layer as a mask. A careful comparison between standard parallel plate reactive ion etching and inductively coupled plasma etching techniques is performed, aimed at obtaining periodic structures with high aspect ratio and good profile sharpness.",

keywords = "Amorphous silicon, Anisotropic etching, Photonic crystals",

author = "E. Bennici and S. Ferrero and F. Giorgis and Pirri, {C. F.} and R. Rizzoli and P. Schina and L. Businaro and {Di Fabrizio}, E.",

year = "2003",

month = mar,

doi = "10.1016/S1386-9477(02)00668-9",

language = "English (US)",

volume = "16",

pages = "539--543",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "3-4",

note = "Symposium H of the Spring Meeting of the Europe (E-MRS-02H) ; Conference date: 18-06-2002 Through 21-06-2002",

}

TY - JOUR

T1 - a-Si:H based two-dimensional photonic crystals

AU - Bennici, E.

AU - Ferrero, S.

AU - Giorgis, F.

AU - Pirri, C. F.

AU - Rizzoli, R.

AU - Schina, P.

AU - Businaro, L.

AU - Di Fabrizio, E.

PY - 2003/3

Y1 - 2003/3

N2 - We describe the fabrication processes of silicon-based two-dimensional photonic crystals (2D-PCs) with a photonic band gap in the near-IR range. The procedures involve electron beam lithography followed by an anisotropic etching step of hydrogenated amorphous silicon thin films deposited by plasma enhanced chemical vapor deposition. Micrometric and submicrometric arrays of cylindrical holes are transferred using a poly-methylmethacrylate resist layer as a mask. A careful comparison between standard parallel plate reactive ion etching and inductively coupled plasma etching techniques is performed, aimed at obtaining periodic structures with high aspect ratio and good profile sharpness.

AB - We describe the fabrication processes of silicon-based two-dimensional photonic crystals (2D-PCs) with a photonic band gap in the near-IR range. The procedures involve electron beam lithography followed by an anisotropic etching step of hydrogenated amorphous silicon thin films deposited by plasma enhanced chemical vapor deposition. Micrometric and submicrometric arrays of cylindrical holes are transferred using a poly-methylmethacrylate resist layer as a mask. A careful comparison between standard parallel plate reactive ion etching and inductively coupled plasma etching techniques is performed, aimed at obtaining periodic structures with high aspect ratio and good profile sharpness.

KW - Amorphous silicon

KW - Anisotropic etching

KW - Photonic crystals

UR - http://www.scopus.com/inward/record.url?scp=0037373061&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00668-9

DO - 10.1016/S1386-9477(02)00668-9

M3 - Conference article

AN - SCOPUS:0037373061

SN - 1386-9477

VL - 16

SP - 539

EP - 543

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Symposium H of the Spring Meeting of the Europe (E-MRS-02H)

Y2 - 18 June 2002 through 21 June 2002

ER -

a-Si:H based two-dimensional photonic crystals

Abstract

Keywords

ASJC Scopus subject areas

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