A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

P. Majhi; H. C. Wen; K. Choi; H. Alshareef; C. Huffman; B. H. Lee

doi:10.1109/VTSA.2005.1497097

A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

P. Majhi^*, H. C. Wen, K. Choi, H. Alshareef, C. Huffman, B. H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by ∼300 meV by varying the nitrogen content in the film even after 1000°C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.

Original language	English (US)
Title of host publication	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages	105-106
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2005.1497097
State	Published - 2005
Externally published	Yes
Event	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China Duration: Apr 25 2005 → Apr 27 2005

Publication series

Name	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other	2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	04/25/05 → 04/27/05

ASJC Scopus subject areas

General Engineering

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10.1109/VTSA.2005.1497097

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Majhi, P., Wen, H. C., Choi, K., Alshareef, H., Huffman, C., & Lee, B. H. (2005). A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 105-106). Article T66 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). https://doi.org/10.1109/VTSA.2005.1497097

Majhi, P. ; Wen, H. C. ; Choi, K. et al. / A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates. 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. pp. 105-106 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

@inproceedings{84f3a86d471c431eb0f3e16ba87fd317,

title = "A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates",

abstract = "Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by ∼300 meV by varying the nitrogen content in the film even after 1000°C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.",

author = "P. Majhi and Wen, {H. C.} and K. Choi and H. Alshareef and C. Huffman and Lee, {B. H.}",

year = "2005",

doi = "10.1109/VTSA.2005.1497097",

language = "English (US)",

isbn = "078039058X",

series = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers",

pages = "105--106",

booktitle = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers",

note = "2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH ; Conference date: 25-04-2005 Through 27-04-2005",

}

Majhi, P, Wen, HC, Choi, K, Alshareef, H, Huffman, C & Lee, BH 2005, A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates. in 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers., T66, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, pp. 105-106, 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Hsinchu, Taiwan, Province of China, 04/25/05. https://doi.org/10.1109/VTSA.2005.1497097

A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates. / Majhi, P.; Wen, H. C.; Choi, K. et al.
2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 105-106 T66 (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, B. H.

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AB - Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by ∼300 meV by varying the nitrogen content in the film even after 1000°C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.

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Majhi P, Wen HC, Choi K, Alshareef H, Huffman C, Lee BH. A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers. 2005. p. 105-106. T66. (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). doi: 10.1109/VTSA.2005.1497097

A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

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