TY - JOUR
T1 - A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer
AU - Sun, Jian
AU - Kosel, Jürgen
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/4
Y1 - 2013/4
N2 - An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.
AB - An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.
UR - http://hdl.handle.net/10754/562702
UR - http://ieeexplore.ieee.org/document/6472804/
UR - http://www.scopus.com/inward/record.url?scp=84875678712&partnerID=8YFLogxK
U2 - 10.1109/LED.2013.2247375
DO - 10.1109/LED.2013.2247375
M3 - Article
SN - 0741-3106
VL - 34
SP - 547
EP - 549
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 4
ER -