A tunable colloidal quantum dot photo field-effect transistor

Subir Ghosh; Sjoerd Hoogland; Vlad Sukhovatkin; Larissa Levina; Edward H. Sargent

doi:10.1063/1.3636438

A tunable colloidal quantum dot photo field-effect transistor

Subir Ghosh, Sjoerd Hoogland, Vlad Sukhovatkin, Larissa Levina, Edward H. Sargent

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

Original language	English (US)
Pages (from-to)	101102
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3636438
State	Published - Sep 6 2011
Externally published	Yes

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title = "A tunable colloidal quantum dot photo field-effect transistor",

abstract = "We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. {\textcopyright} 2011 American Institute of Physics.",

author = "Subir Ghosh and Sjoerd Hoogland and Vlad Sukhovatkin and Larissa Levina and Sargent, {Edward H.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: This publication is based in part on work supported by an award (No. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellent Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, Angstrom Engineering and Innovative Technology. We acknowledge the assistance of Dr. Ratan Debnath and Dr. Xihua Wang. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2011",

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doi = "10.1063/1.3636438",

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AU - Hoogland, Sjoerd

AU - Sukhovatkin, Vlad

AU - Levina, Larissa

AU - Sargent, Edward H.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: This publication is based in part on work supported by an award (No. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellent Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, Angstrom Engineering and Innovative Technology. We acknowledge the assistance of Dr. Ratan Debnath and Dr. Xihua Wang. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2011/9/6

Y1 - 2011/9/6

N2 - We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

AB - We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

A tunable colloidal quantum dot photo field-effect transistor

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