A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

Jihoon Park, Narendra Kurra, M. N. AlMadhoun, Ihab N. Odeh, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.
Original languageEnglish (US)
Pages (from-to)2366-2370
Number of pages5
JournalJ. Mater. Chem. C
Volume3
Issue number10
DOIs
StatePublished - 2015

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

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