TY - JOUR
T1 - A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3
AU - Kumar, Anup Bera
AU - Peng, Haiyang
AU - Lourembam, James
AU - Shen, Youde
AU - Sun, Xiaowei
AU - Wu, Tao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is partially supported by the National Research Foundation of Singapore through the Competitive Research Programme (CRP Award No. NRF-CRP-4-2008-04), the Science and Engineering Research Council, Agency for Science, Technology and Research (A*STAR) of Singapore (project No. 092 151 0088), and the National Natural Science Foundation of China (NSFC) (project Nos. 61006037 and 61076015).
PY - 2013/4/25
Y1 - 2013/4/25
N2 - Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/562730
UR - http://doi.wiley.com/10.1002/adfm.201300509
UR - http://www.scopus.com/inward/record.url?scp=84885650936&partnerID=8YFLogxK
U2 - 10.1002/adfm.201300509
DO - 10.1002/adfm.201300509
M3 - Article
SN - 1616-301X
VL - 23
SP - 4977
EP - 4984
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 39
ER -