@inproceedings{4c691fdea4794bbaa963d5f4360c0ba9,
title = "A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate",
abstract = "The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.",
author = "Aditya Prabaswara and Ng, {Tien Khee} and Chao Zhao and Bilal Janjua and Ahmed Alyamani and Munir El-desouki and Ooi, {Boon S.}",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).",
year = "2017",
month = may,
day = "8",
doi = "10.1364/cleo_si.2017.sth3n.5",
language = "English (US)",
isbn = "9781943580279",
pages = "1--2",
booktitle = "Conference on Lasers and Electro-Optics",
publisher = "The Optical Society",
address = "United States",
}