@inproceedings{90fe8d8dcc8a4b0291edd07004c6e24f,
title = "A ZnO/InN/GaN heterojunction photodetector with extended infrared response",
abstract = "An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.",
keywords = "Gallium nitride, Heterojunctions, II-VI semiconductor materials, Lighting, Photodetectors, Photonics, Zinc oxide",
author = "Hsu, {Lung Hsing} and Hsu, {Shun Chieh} and Lee, {Hsin Ying} and Tsai, {Yu Lin} and Lin, {Da Wei} and Kuo, {Hao Chung} and Hwang, {Yi Chia} and Chen, {Yin Han} and He, {Jr Hau} and Cheng, {Yuh Jen} and Lin, {Shih Yen} and Lin, {Chien Chung}",
note = "Publisher Copyright: {\textcopyright} 2015 OSA.; Conference on Lasers and Electro-Optics, CLEO 2015 ; Conference date: 10-05-2015 Through 15-05-2015",
year = "2015",
month = aug,
day = "10",
language = "English (US)",
series = "Conference on Lasers and Electro-Optics Europe - Technical Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 Conference on Lasers and Electro-Optics, CLEO 2015",
address = "United States",
}