Ab initio study of the fundamental properties of novel III-V nitride alloys Ga1-xTlxN

N. Saidi-Houat; A. Zaoui; A. Belabbes; M. Ferhat

doi:10.1016/j.mseb.2009.01.031

Ab initio study of the fundamental properties of novel III-V nitride alloys Ga_1-xTl_xN

N. Saidi-Houat, A. Zaoui^*, A. Belabbes, M. Ferhat

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The important features of nitrides materials include extreme hardness, high thermal conductivities, and make them as strategic material system for device applications at high pressure and temperature. The purpose of the present study is to predict novel ternary III-V alloys based on the TlN compound. We present and analyse first the important features of pure TlN before handling the complete contribution regarding the predictive alloy Ga_1-xTl_xN. From the obtained results we notice the inverted band gap in TlN, which reflects a semi-metallic character and a strong charge transfer towards the nitrogen atom. For Ga_1-xTl_xN alloys, the optical band gap bowing (i.e., the nonlinearity noticed in the variation of the alloy as a function of the amount of concentration x) is found to be strong and composition dependent following the same tendency of the other highly mismatched III-V alloys, where the composition induces disorder in bond lengths.

Original language	English (US)
Pages (from-to)	26-31
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	162
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2009.01.031
State	Published - May 15 2009
Externally published	Yes

Keywords

Ab initio
Nitrides III-V alloys

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2009.01.031

Cite this

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abstract = "The important features of nitrides materials include extreme hardness, high thermal conductivities, and make them as strategic material system for device applications at high pressure and temperature. The purpose of the present study is to predict novel ternary III-V alloys based on the TlN compound. We present and analyse first the important features of pure TlN before handling the complete contribution regarding the predictive alloy Ga1-xTlxN. From the obtained results we notice the inverted band gap in TlN, which reflects a semi-metallic character and a strong charge transfer towards the nitrogen atom. For Ga1-xTlxN alloys, the optical band gap bowing (i.e., the nonlinearity noticed in the variation of the alloy as a function of the amount of concentration x) is found to be strong and composition dependent following the same tendency of the other highly mismatched III-V alloys, where the composition induces disorder in bond lengths.",

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AU - Ferhat, M.

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AB - The important features of nitrides materials include extreme hardness, high thermal conductivities, and make them as strategic material system for device applications at high pressure and temperature. The purpose of the present study is to predict novel ternary III-V alloys based on the TlN compound. We present and analyse first the important features of pure TlN before handling the complete contribution regarding the predictive alloy Ga1-xTlxN. From the obtained results we notice the inverted band gap in TlN, which reflects a semi-metallic character and a strong charge transfer towards the nitrogen atom. For Ga1-xTlxN alloys, the optical band gap bowing (i.e., the nonlinearity noticed in the variation of the alloy as a function of the amount of concentration x) is found to be strong and composition dependent following the same tendency of the other highly mismatched III-V alloys, where the composition induces disorder in bond lengths.

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