Abstract
Resistance degradation in PZT thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. It is found that the mean-time-to-failure (life-time or tf) of the capacitors shows a power law dependence on applied voltage of the form tf∝V-n (n to approximately 4-5). The capacitor life-time also (tf) exhibits a temperature dependence of the form tf∝exp(Ea/kT), with an activation energy of approximately 0.8 eV. The steady-state leakage current in these samples appears to be bulk controlled. The voltage, temperature, and polarity dependence of the leakage current collectively suggest a leakage current mechanism most similar to a Frenkel-Poole process. The Nb-doped PZT films exhibit superior life-time and leakage current to the undoped PZT films. This result can be explained based on the point-defect chemistry of the PZT system. Finally, the results indicate that the Nb-doped PZT films meet the essential requirements for decoupling capacitor applications.
| Original language | English (US) |
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| Pages | 421-425 |
| Number of pages | 5 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
| Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
|---|---|
| City | East Brunswick, NJ, USA |
| Period | 08/18/96 → 08/21/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering