Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser

Ahmad Al-Jabr; Mohammed Abdul Majid; Mohd Sharizal Alias; Tien Khee Ng; Boon S. Ooi

doi:10.1364/ASSL.2015.AM5A.46

Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser

Ahmad Al-Jabr, Mohammed Abdul Majid, Mohd Sharizal Alias, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

Original language	English (US)
Title of host publication	Advanced Solid State Lasers
Publisher	The Optical Society
ISBN (Print)	9781943580026
DOIs	https://doi.org/10.1364/ASSL.2015.AM5A.46
State	Published - Sep 28 2015

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title = "Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser",

abstract = "We demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.",

author = "Ahmad Al-Jabr and Majid, {Mohammed Abdul} and Alias, {Mohd Sharizal} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2015",

month = sep,

day = "28",

doi = "10.1364/ASSL.2015.AM5A.46",

language = "English (US)",

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booktitle = "Advanced Solid State Lasers",

publisher = "The Optical Society",

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T1 - Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser

AU - Al-Jabr, Ahmad

AU - Majid, Mohammed Abdul

AU - Alias, Mohd Sharizal

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/9/28

Y1 - 2015/9/28

N2 - We demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

AB - We demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

UR - http://hdl.handle.net/10754/622510

UR - https://www.osapublishing.org/abstract.cfm?URI=ASSL-2015-AM5A.46

UR - http://www.scopus.com/inward/record.url?scp=84947578530&partnerID=8YFLogxK

U2 - 10.1364/ASSL.2015.AM5A.46

DO - 10.1364/ASSL.2015.AM5A.46

M3 - Conference contribution

SN - 9781943580026

BT - Advanced Solid State Lasers

PB - The Optical Society

ER -

Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser

Abstract

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