Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17)

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We investigated the electrical properties of Mg-doped Ga1-xInxN grown on an a-plane template. High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm-3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.83In0.17N was found to be as low as 48 meV. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)1188-1190
Number of pages3
JournalPhysica Status Solidi (B) Basic Research
Issue number6
StatePublished - Jun 1 2009
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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