Abstract
We investigated the electrical properties of Mg-doped Ga1-xInxN grown on an a-plane template. High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm-3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.83In0.17N was found to be as low as 48 meV. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original language | English (US) |
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Pages (from-to) | 1188-1190 |
Number of pages | 3 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 246 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics