Advantages of a buried-gate structure for graphene field-effect transistor

Sang Kyung Lee; Yun Ji Kim; Sunwoo Heo; Woojin Park; Tae Jin Yoo; Chunhum Cho; Hyeon Jun Hwang; Byoung Hun Lee

doi:10.1088/1361-6641/ab0d54

Advantages of a buried-gate structure for graphene field-effect transistor

Sang Kyung Lee, Yun Ji Kim, Sunwoo Heo, Woojin Park, Tae Jin Yoo, Chunhum Cho, Hyeon Jun Hwang, Byoung Hun Lee

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm2 V-1 s-1) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.

Original language	English (US)
Pages (from-to)	055010
Journal	Semiconductor Science and Technology
Volume	34
Issue number	5
DOIs	https://doi.org/10.1088/1361-6641/ab0d54
State	Published - Apr 10 2019

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title = "Advantages of a buried-gate structure for graphene field-effect transistor",

abstract = "Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm2 V-1 s-1) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.",

author = "Lee, {Sang Kyung} and Kim, {Yun Ji} and Sunwoo Heo and Woojin Park and Yoo, {Tae Jin} and Chunhum Cho and Hwang, {Hyeon Jun} and Lee, {Byoung Hun}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partially supported by Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062), Nano Materials Technology Development Program (2016M3A7B4909942) and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873) through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT, Korea.",

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AU - Yoo, Tae Jin

AU - Cho, Chunhum

AU - Hwang, Hyeon Jun

AU - Lee, Byoung Hun

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partially supported by Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062), Nano Materials Technology Development Program (2016M3A7B4909942) and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873) through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT, Korea.

PY - 2019/4/10

Y1 - 2019/4/10

N2 - Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm2 V-1 s-1) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.

AB - Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm2 V-1 s-1) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.

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Advantages of a buried-gate structure for graphene field-effect transistor

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